原子層エピタキシー法によるGaAs(001)基板上のMnAs成長

概要

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Atomic layer epitaxy(ALE) of MnAs on GaAs(001) has been investigated using bismethylcyclopentadienylmanganes(CH3C5CH4)2Mn and trisdimethylaminoarsine As[N(CH3)2] for manganese and arsenic precursors, respectively. The α-MnAs layer of "type B" orientation was successfully grown by an alternative source supply with a wide growth temperature range from 320 to 500℃. The grown layer showed a smooth surface morphology, reflecting the self-limiting growth. The decresed growth rate was observed was realized at higher growth temperatures but the saturation thickness was 9.5×10(-2)nm/cycle, which was attributed to the formation of a stable surface-reconstruction of manganese stabilized surface.
宮崎大学の論文
2007-08-30