High Quality Delay Test Generation Based on Multiple-Threshold Gate-Delay Fault Model(Special Issue on Test and Verification of VLSI)
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概要
- 論文の詳細を見る
This paper presents a practical fault model for delay testing, called a multiple-threshold gate-delay fault model, to obtain high quality tests that guarantee the detection of delay faults for various extra-delays. Fault efficiencies for multiple thresholds of the extra-delay are introduced as a coverage metric that describes the quality of tests. Our approach guarantees that each gate-delay fault is tested on the path that is almost the longest one passing through the faulty line by using two-pattern tests with pattern-independent timing. We present the procedures of the path selection, fault simulation, and the test generation, where the path-status graph technique is used as not to rely on the enumeration of paths. Experimental results for benchmark circuits demonstrate that the proposed metric gives useful information that transition fault efficiency cannot, and that the proposed test generation can achieve high fault efficiencies for multiple-threshold gate-delay faults.
- 社団法人電子情報通信学会の論文
- 2002-10-01
著者
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Fukumoto Satoshi
Graduate School Of Engineering Tokyo Metropolitan University
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Iwasaki K
Tokyo Metropolitan Univ. Hachiouji‐shi Jpn
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Iwasaki Kazuhiko
Graduate School Of Engineering Tokyo Metropolitan University
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SATO Yasuo
Device Development Center,Hitachi,Ltd.
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NAKAO Michinobu
Central Research Laboratory, Hitachi, Ltd.
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KIYOSHIGE Yoshikazu
Central Research Laboratory, Hitachi, Ltd.
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HATAYAMA Kazumi
Central Research Laboratory, Hitachi, Ltd.
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Sato Yoshiharu
Graduate School of Engineering, Hokkaido University
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Nakao Michinobu
Renesas Technology Corp.
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Hatayama Kazumi
Renesas Technology Corp.
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Hatayama Kazumi
Semiconductor & Integrated Circuits Hitachi Ltd.
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Fukumoto Satoshi
Graduate School Of Engineering Hiroshima University
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Kiyoshige Yoshikazu
Renesas Technology Corp.
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Nakao M
Renesas Technology Corp.
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Sato Y
Micro Device Division Hitachi Ltd.:(present Address)semiconductor Technology Academic Research Cente
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Sato Yasuo
Device Development Center Hitachi Ltd.
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