Comparative Study of Pore Size of Low-Dielectric-Constant Porous Spin-on-Glass Films Using Different Methods of Nondestructive Instrumentation : Semiconductors

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概要

• 論文の詳細を見る

• The pore sizes of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) thin films having different k values (k=1.8-2.5) are comparatively studied using different nondestructive instrumental ways and also with reference to sorption porosimetry. The pore size and its spread are found to increase with increasing porosity, or with decreasing dielectric constant.

• 社団法人応用物理学会の論文
• 2001-04-01

著者

• Kondoh Eiichi

  Department Of Mechanical System Engineering Faculty Of Engineering Yamanashi University

• BALANOV Mikhail

  Silicon Processing Technology Division, IMEC

• LIN Eric

  Materials Science and Engineering Laboratory, National Institute of Standards and Technology

• GIDLEY David

  Department of Physics, University of Michigan

• NAKASHIMA Akira

  Fine Chemicals Research Center, Catalysts and Chemicals Industry Co. Ltd.

• Lin Eric

  Materials Science And Engineering Laboratory National Institute Of Standards And Technology

• Gidley David

  Department Of Physics University Of Michigan

• Balanov Mikhail

  Silicon Processing Technology Division Imec

• Nakashima Akira

  Fine Chemicals Research Center Catalysts And Chemicals Industry Co. Ltd.

• Baklanov Mikhail

  Silicon Processing Technology Division, IMEC

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