Parametric Amplification in a Directly Modulated Semiconductor Laser : Optics and Quantum Electronics
スポンサーリンク
概要
- 論文の詳細を見る
We investigate the parametric amplification and its saturation characteristics in a directly modulated semiconductor laser. The parametric gain depends on the resonance frequency shift that occurs due to the pump modulation current and the bias current. Also, the parametric gain is a strong function of the phase between the signal and the pump modulation currents. The saturation characteristic of the parametric amplification occurs at a large signal modulation current due to depletion of the pump by an amplified optical signal. We explain the observed behaviors using the analytic results of the nonlinear rate equations of the semiconductor laser.
- 社団法人応用物理学会の論文
- 2001-07-01
著者
-
Lee Chang-hee
Department Of Electrical Engineering & Computer Science Korea Advanced Institute Of Science And
-
Cho Seong-dae
Optical Networking Technology Division Access Network Laboratory Korea Telecom
-
Shin Sang-yung
Department Of Electrical Engineering & Computer Science Korea Advanced Institute Of Science And
関連論文
- Residual Stress Effect on Self-Annealing of Electroplated Copper
- Parametric Amplification in a Directly Modulated Semiconductor Laser : Optics and Quantum Electronics
- Prediction of macrozoobenthic species distribution in the Korean Saemangeum tidal flat based on a logistic regression model of environmental parameters
- Residual Stress Effect on Self-Annealing of Electroplated Copper
- Low-power scan driver embedded with level shifter using depletion-mode amorphous indium–gallium–zinc–oxide thin-film transistors for high-resolution flat-panel displays