A 24-GHz pHEMT high-gain power amplifier (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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A 24-GHz differential power amplifier is designed with 0.25μm pHEMT process. The power amplifier achieved P1dB of 28dBm. The measured linear gain is about 25dB at the 23.1GHz. The chip size is only 1.2×2.1mm^2. Generally, many pHEMT power amplifiers have been reported, which are based on current combining technique. Recently, the voltage combining technique has been presented for power amplifiers with watt-level output power. In this work, a tournament-shaped power combiner is applied to design 24-GHz pHEMT which utilizes the voltage combining technique. We believe that the tournament-shaped power combiner is the solution of mm-wave power amplifier, since one can produce high power with low breakdown voltage devices. We got the higher gain and output power density per chip area than the previous works. This shows the feasibility of the tournament-shaped power combiner for the mm-wave power amplifier successfully.
社団法人電子情報通信学会の論文
2007-06-18