Organic light emitting devices: the efficiency of polymer light emitting devices with phosphorescent dopant affected by ETL thickness (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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We demonstrate the efficiency of polymer light-emitting devices (PLED) with a phosphorescent dopant affected by (Electron Transport Layer) ETL thickness. This device has a structure of indium tin oxide(ITO) glass/ PEDOT : PSS/ PVK doped with phosphorescent materials(FIrpic)/ BCP / Alq_3 / LiF : Al. The HBL(Hole Blocking Layer) used for a high efficiency, but the using HBL is a higher operating voltage than the excluding HBL. Thus, we controlled thickness of HBL and ETL as 5〜25 nm, but fixed other structural layer. Some of experiment fixed thickness of HBL (5 nm) and varied thickness of ETL (10〜25 nm). Other of experiment fixed thickness of ETL (20 nm) and varied thickness of HBL (5〜25 nm). We estimate that thickness of ETL is more sensitive than thickness of HBL in efficiency. This PLED device exhibited an emission maximum at a wavelength =474nm, a maximum brightness of 3012 cd/m^2 and an efficiency at 2.15 cd/A achieved at a driving voltage of 16V.
社団法人電子情報通信学会の論文
2007-06-18