Analytical models for breakdown voltage and specific on-resistance of 6H-SiC schottky diodes (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

論文の詳細を見る
Analytical expressions for the breakdown voltage and specific on-resistance of 6H-SiC Schottky diodes have been derived successfully by extracting an effective ionization coefficient in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of 10^<15>〜10^<18>cm^<-3>. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of 5×10^<15>〜10^<16>cm^<-3>.
2007-06-18