Interface Formation and Electrical Properties of TiO_xN_y/HfO_2/Si Structure
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概要
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In this work, interface formation and electrical properties of the interface between TiO_xN_y and HfO_2 for application of gate structure were investigated as a function of annealing temperature. HfO_2 layers were formed at 500℃ by the thermal oxidation of the sputter-deposited Hf layers on n-Si (001) and followed by reactive DC magnetron sputter deposition of TiO_xN_y layers at room temperature. Phase identification of TiO_xN_y layers before and after thermal annealing TiO_xN_y (100 nm)/HfO_2/Si by X-ray diffraction (XRD) indicates the formation of TiO_xN_y with the preferential orientations in (111), (200) and (220) directions. Depth profiling analysis of Ti, Si, Hf, N, and 0 element for TiO_xN_y (50 nm)/HfO_2/Si structure by Auger electron spectroscopy (AES) shows the increased oxidation of TiO_xN_y, layers at elevated annealing temperature, T_A = 800℃. Investigation of the interfacial reaction of TiO_xN_y (5 nm)/HfO_2 by depth profiling using X-ray photoelectron spectroscopy (XPS) shows the existence of mixture of TiO_<1-z>N_2 and TiO_2 (or TiO) phase and increased fraction of TiO_2 phase and Hf-0 bondings for the samples annealed at the elevated annealing temperature, T_A = 800℃. Sheet resistance of TiO_xN_y/HfO_2/Si systems measured by a four-point probe shows the initial decrease in R_s values but the abrupt increase in Rs values at T_A = 800℃. The combined results indicate that TiO_xN_y layer acts as an effective diffusion barrier for Hf and 0 element in the HfO_2 layer at the annealing temperature ≤700C℃ but O and Hf diffused out of the HfO_2 layers reacted with TiO_xN_y layers at the elevated annealing temperature of 800C℃.
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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KANG H.
Department of Energy & Resources Engineering, The University of Dong-A
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YANG S.
Department of Biomedical Engineering, University of Iowa
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Kim K.
Department Of Materials Engineering And Center For Advanced Plasma Surface Technology Sungkyunkwan U
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AHN Y.
Department of Materials Engineering and Center for Advanced Plasma Surface Technology, SungKyunKwan
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BAN S.
Department of Materials Engineering and Center for Advanced Plasma Surface Technology, SungKyunKwan
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ROH Y.
Department of Electric and Computer Engineering SungKyunKwan University
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LEE N.-E.
Department of Materials Engineering and Center for Advanced Plasma Surface Technology, SungKyunKwan
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Lee N.-e.
Department Of Materials Engineering And Center For Advanced Plasma Surface Technology Sungkyunkwan U
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Kim K.
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Kim K.
Department Of Dental Biomaterials College Of Dentistry Kyungpook National University
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Ban S.
Department Of Materials Engineering And Center For Advanced Plasma Surface Technology Sungkyunkwan U
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Ahn Y.
Department of Electric and Computer Engineering SungKyunKwan University
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