Dry Etching of SiO_2 Thin Films with Perfluoropropenoxide-O_2 and Perfiuoropropene-O_2 Plasmas

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概要

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• In this work, the plasma etching characteristics of SiO_2 thin films have been investigated using RF glow discharges fed with C_3F60 and C_3F6 mixted with oxygen. The results have been compared with performances obtained with CF_4-CHF_3 gases. The research was aimed at studying the utilization of new fluorocarbons in SiO_2 plasma etching with a low impact on global warning. The following features have been investigated: SiO_2 etch rate, SiO_2/Si selectivity, contamination of silicon surfaces exposed to the plasma, and greenhouse gas emission.

• 2002-10-15

著者

• Shirafuji Tatsuru

  International Innovation Center Kyoto University

• Fracassi Francesco

  Cnr Centro Di Studio Per La Chimica Dei Plasmi C-o Dipartimento Di Chimica Universita De Bari

• SHIRAFUJI Tatsuru

  International innovation Center, Kyoto University

• Fracassi Francesco

  CNR, Centro di Studio per la Chimica dei Plasmi, c-o Dipartimento di Chimica, Universita de Bari

• Fornelli Antonella

  CNR, Centro di Studio per la Chimica dei Plasmi, c-o Dipartimento di Chimica, Universita de Bari

関連論文

• Plasma Copolymerization of C6F6/C5F8 for Application of Low-Dielectric-Constant Fluorinated Amorphous Carbon Films and Its Gas-Phase Diagnostics Using In Situ Fourier Transform Infrared Spectroscopy
• Plasma Enhanced Chemical Vapor Deposition of Fluorinated Amorphous Carbon Films on the Surface with Reverse Tapered Microstructures
• Dry Etching of SiO_2 Thin Films with Perfluoropropenoxide-O_2 and Perfiuoropropene-O_2 Plasmas
• Spatiotemporal Surface Charge Measurement in Two Types of Dielectric Barrier Discharges Using Pockels Effect

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