Organic Low-k Dielectric Material Etching by CH_3NH_2/N_2 Plasma

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概要

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• An etching process has been developed for an organic low-k dielectric material, FLARE, that uses a gas chemistry of CH_3NH_2/N_2 in a magnetic neutral loop discharge (NLD) plasma system. The organic low-k etching can provide a normal-taper profile with no micro-trenching and little hard-mask erosion, which are necessary for fabricating Cu/organic low-k damascene multilevel interconnects. Inverse reactive ion etching (RIE) lag was observed under conditions that produced the normal-taper profile. We evaluated the amount of ions and radicals generated in CH_3NH_2/N_2, CH_4/N_2, and H_2/N_2 plasmas by means of quadrupole mass spectrometry (QMS) and analyzed films deposited on a bare Si substrate in CH_3NH_2/N_2, CH_4/N_2, and H_2/N_2 plasmas by using X-ray photoelectron spectroscopy (XPS). We found that a normal-taper etching profile was obtained when the C/N concentration ratio of the deposited film was about 2-3 in the CH_3NH_2/N_2 plasma.

• 社団法人応用物理学会の論文
• 2002-10-15

著者

• HAYASHI Toshio

  Institute for Semiconductor Technologies, ULVAC, Inc.

• NAKAGAWA Hideo

  ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric industrial Co

• Nakagawa Hideo

  Ulsi Process Technology Develoμment Center Semiconductor Company Matsushita Electric Industrial Co.

• MORIKAWA Masuhiro

  Institute for Semiconductor Technologies, ULVAC Japan Ltd.

• Morikawa Masuhiro

  Institute For Semiconductor Technologies Ulvac Japan Ltd.

• Hayashi Toshio

  Institute Of Fluid Science Tohoku University

関連論文

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• Conelike Defect in Deep Quartz Etching Employing Neutral Loop Discharge
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• CH_4/N_2 Plasma Etching for Organic Low-k Dielectric Material
• Organic Low-k Dielectric Material Etching by CH_3NH_2/N_2 Plasma

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