"Actinic-only" Defects in Extreme Ultraviolet Lithography Mask Blanks : Native Defects at the Detection Limit of Visible-Light Inspection Tools
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概要
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We present recent experimental results from an actmic defect inspection system for extreme ultraviolet (EUV) lithography mask blanks. The current actinic inspection system has demonstrated the ability to detect 50 nm defect in cross correlation experiments with visible-light inspection tools. We found that native defects as small as 60 nm with only 3 nin height were detectable by the actinic tool. These defects are just below the detection limit of current commercial visible-light inspection tools. A new class of defect was discovered, which is quite large, in the several micrometer range, and shows suppressed non-specular EUV scattering intensity as compared to the intrinsic background scatter from the multilayer blanks. Despite their large physical dimensions, these defects are also near the detection limit of current visible-light inspection tools.
- 社団法人応用物理学会の論文
- 2002-06-30
著者
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YI Moonsuk
Center for X-Ray Optics, Lawrence Berkeley National Laboratory
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Yi Moonsuk
Center For X-ray Optics Lawrence Berkeley National Laboratory Berkeley
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HAGA Tsuneyuki
NTT Telecommunications Energy Laboratories
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Bokor J
Univ. California At Berkeley Ca Usa
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WALTON Chris
Lawrence Livermore National Laboratory
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LARSON Cindy
Lawrence Livermore National Laboratory
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BOKOR Jeffrey
Center for X-Ray Optics, Lawrence Berkeley National Laboratory Berkeley
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Bokor Jeffrey
Center For X-ray Optics Lawrence Berkeley National Laboratory Berkeley:eecs Department University Of
関連論文
- Analysis of Multilayer Structure for Reflection of Extreme-Ultraviolet Wavelength
- Evaluation of Overlay Accuracy for 100-nm Ground Rule in Proximity X-Ray Lithography
- Performance of X-Ray Stepper for Next-Generation Lithography
- "Actinic-only" Defects in Extreme Ultraviolet Lithography Mask Blanks : Native Defects at the Detection Limit of Visible-Light Inspection Tools