誘導スピンフロップモードを用いたtoggle MRAMの書き込み磁場の低減及び書き込みマージンの増大(スピンエレクトロニクス)

概要

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Free layer structures, where two soft magnetic layers were ferromagnetically coupled with a synthetic antiferromagnet (SAF) through non-magnetic layers, were demonstrated to freely control the spin-flop field (H_<flop>) and the saturation field (H_s) of 0.32-μm-wide magnetic tunnel junctions in toggle magnetoresistive random access memories (MRAMs). In the free layer, by reducing the coupling strength through the non-magnetic layers, the magnetization reversal of each soft magnetic layer induced a spin flop of the SAF at a lower field (called the "induced spin-flop mode"), resulting in an H_<flop> reduction. The H_s was significantly increased while maintaining a low H_<flop> by replacing the bilayer SAF with a multilayer SAF. The free layers using the induced spin-flop mode are expected to reduce the write field of toggle MRAMs with densities greater than 4 Mb to less than 50 Oe.
社団法人日本磁気学会の論文
2007-05-01