Ferromagnetic Resonance Simulation of Mn-Ir/Fe-Si Exchange-Coupled Film on Basis of LLG Equation Taking Exchange-Stiffness Dispersion Model into Account
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概要
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The high-frequency permeability of Mn_<80>Ir_<20> (at.%)/Fe_<89>Si_<11> (at.%) exchange-coupled films for microwave applications was evaluated. For this purpose, a micromagnetic simulator based on the LLG equation was introduced. When the complex permeability of exchange-coupled and non-exchange-coupled films with the same Fe-Si thickness of 100 nm was compared in the experimental results, parameter Δf_Γ/f_Γ of the exchange-biased Fe-Si film was larger than that of a single Fe-Si film with uniaxial magnetic anisotropy. This is where f_x is the ferromagnetic resonance (FMR) frequency and Δf_Γ is the frequency bandwidth of the FMR half line-width, i.e., where Δf_Γ/f_Γ corresponds to the inverse of the FMR Q factor. An exchange-stiffness dispersion model was introduced into the LLG simulation to investigate the behavior of FMR in the exchange-biased film. We found that the exchange-stiffness dispersion in Fe-Si gives rise to a distribution of exchange bias in the thickness direction, and that such spatial distribution increases parameter Δf_Γ/f_Γ The authors consider that the exchange-stiffness in polycrystalline Fe-Si film is not constant and has a Gaussian distribution, because distributed exchange-stiffness occurs with lattice defects and/or grain boundaries. When average stiffness constant A was 1.7 μerg/cm and its standard deviation σ_A was 0.83 μerg/cm, the calculated results agreed with those from experiments.
- 2007-05-01
著者
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Yamasawa K.
Spin Device Technology Center Shinshu University
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Inagaki K.
Spin Device Technology Center Shinshu University
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Sonehara M.
Spin Device Technology Center, Shinshu University
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Ishikawa T.
Spin Device Technology Center, Shinshu University
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Sato T.
Spin Device Technology Center, Shinshu University
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Miura Y.
Spin Device Technology Center, Shinshu University
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Fujiwara H.
The University of Alabama, Center for Materials for Information Technology
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Sonehara M.
Spin Device Technology Center Shinshu University
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Miura Y.
Spin Device Technology Center Shinshu University
関連論文
- Development of an Integrated RF Impedance Matching Device with LPF Function using a CoFeB Magnetic/Polyimide Dielectric Hybrid Thin-Film Coplanar-Line
- Ferromagnetic Resonance Simulation of Mn-Ir/Fe-Si Exchange-Coupled Film on Basis of LLG Equation Taking Exchange-Stiffness Dispersion Model into Account
- Ferromagnetic Resonance Simulation of Mn-Ir/Fe-Si Exchange-Coupled Film on the Basis of LLG Equation with Taking Account of Exchange-Stiffness Dispersion Model