An Uncooled Infrared Detector with Electrically Floated Absorber Structure(Session 8B Emerging Devices and Technologies II)

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概要

• 論文の詳細を見る

• A capacitive type uncooled infrared detector structure with new capacitance reading scheme is investigated. The structure has two parts: infrared absorber and bi-material legs. The infrared absorber has an insulator-metal-insulator structure, and acts as a top electrode of a variable capacitor composed of two bottom electrodes and top electrode (infrared absorber) which is separated electrically from the substrate. The absorber is posted to the substrate through bi-material legs which are designed to have electrical insulation, low thermal conductance and temperature dependent deformation characteristics. Thermal energy from absorbed infrared rays is transferred to the bi-material legs, resulting in leg bending, top floating electrode (absorber) lifting, and capacitance change of the variable capacitor. Electrical signal part and mechanical moving part of a MEMS structure can be separated with this scheme. Therefore, it is applicable to high Q-factor capacitors of other devices such as ultrasonic sensors.

• 社団法人電子情報通信学会の論文
• 2006-06-26

著者

• Lee Hee-chul

  Dept. Of Eecs

• Lee Yong-soo

  Dept. Of Eecs

• Kwon Il-Woong

  Dept. of EECS

関連論文

• An Uncooled Infrared Detector with Electrically Floated Absorber Structure(Session 8B Emerging Devices and Technologies II,AWAD2006)
• An Uncooled Infrared Detector with Electrically Floated Absorber Structure(Session 8B Emerging Devices and Technologies II)
• An Uncooled Infrared Detector with Electrically Floated Absorber Structure
• An Uncooled Infrared Detector with Electrically Floated Absorber Structure

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