Fast recovery SiGe/Si/Si pin diodes with a selective lifetime control technique(Session 6B Power Devices,AWAD2006)

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概要

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• In power switching circuits, fast-recovery diodes with a low on-state voltage drop (V_f) are necessary for lower switching noise, faster operation or lower power dissipation. We have found that pin diodes with SiGe anode layers exhibit very short reverse recovery without deteriorating the on-state voltage drop. In our test fabrication, we have successfully proved a recovery of 160ns and a forward voltage drop of 0.86V at a forward current density (I_f) of 100A/cm^2. A simulation work indicates a possibility of 20ns -0.8V at I_f of 100A A/cm^2 in the present diode by adjusting lifetimes in the anode and i layers independently. We discuss mechanism of the fast recovery and low on-state resistance.

• 社団法人電子情報通信学会の論文
• 2006-06-26

著者

• Hirose Fumihiko

  Faculty Of Engineering Yamagata University

• NAGASE Shinichi

  Faculty of Engineering, Yamagata University

• IDA Yusuke

  Faculty of Engineering, Yamagata University

• Ida Yusuke

  Faculty Of Engineering Yamagata University

• Nagase Shinichi

  Faculty Of Engineering Yamagata University

関連論文

• Fast recovery SiGe/Si/Si pin diodes with a selective lifetime control technique(Session 6B Power Devices,AWAD2006)
• Fast recovery SiGe/Si/Si pin diodes with a selective lifetime control technique(Session 6B Power Devices,AWAD2006)
• Fast recovery SiGe/Si/Si pin diodes with a selective lifetime control technique

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