Symmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)

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概要

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• Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d_<x^2-y^2> wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibits a minimumenergy excitation in the A_1 (s-wave) channel. We discuss implications of the results for the Raman scattering and other optical experiments.

• 一般社団法人日本物理学会の論文
• 2006-03-15

著者

• TOHYAMA T.

  Institute for Materials Research, Tohoku University

関連論文

• Symmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)

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