プラズマ中の活性粒子を用いたTiO_2スパッタ膜の形成(II)
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概要
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In this paper we propose a simple method to ionize sputtered Ti and added oxygen gas by introducing He gas in reactive sputtering. Rutile (110) rich TiO_2 films were prepared at a low temperature by using this method. The optimum gas pressure ratio providing the richest rutile composition to deposited film was He: O_2: Ar=1: 0.42: 2.39 for a total gas pressure of 0.27 Pa. The rutile (110) phase was grown by the reaction between sputtered Ti and active oxygen species O_2^+, O^*. The former is generated by the penning ionization of oxygen molecules by He^*. The latter is produced from the decomposition process of O_2^+. This film indicated the greatest crystalline size and the highest refractive index. Furthermore, the film consists of the uniform crystalline sizes of 20～30 nm.
- 福井工業大学の論文
- 2004-03-20