RF反応性スパッタリング法によって作製されたハフニウム添加酸化バナジウム薄膜の光学的特性

概要

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The hafnium doped vanadium oxide thin films are deposited by reactive rf magnetron sputtering from two metallic targets of the vanadium and the hafnium in the argon-oxygen gas mixture atmosphere. The FE-SEM photograph of the vanadium oxide films has a smooth surface and a cross-section of the columnar structure. In the hafnium rich samples, the columnar structure disappears. The x-ray diffraction patterns of the vanadium oxide films are confirmed in the vanadium pentoxide and those of the hafnium rich samples in the amorphous state. The emission peaks at 514eV and 521.5eV in the x-ray photoelectron spectroscopy of the hafnium doped vanadium oxide thin films are assigned V(2p3/2) and V(2p1/2) energy levels caused by the spin-orbit splitting in the vanadium pentoxide. The concentration of the hafnium atom and the stoichiometry for the hafnium doped vanadium oxide thin films are determined by the Rutherford back scattering spectra. The refractive index of the hafnium doped vanadium oxide thin films decreased linearly with doping the hafnium. The decreasing of the refractive index was caused by the increasing of the single oscillator energy E. and by the decreasing of the dispersion energy E_J in the single oscillator model.
明治大学の論文