電子遷移効果素子の安定性について

概要

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In approximation usually employed, the behaviour of a transferred-electron-device in high electric field is determined by Poisson's equation and by that of current continuity in appropriate boundary condition. It has been recently demonstrated that inhomogeneity of doping profile and geometry can determine such property as large-signal-stability. The method employed here is "graphical analysis". It is possible by this analysis to understand diverse phenomena predicted by numerical analysis and found in experiment e. g., 1) the occurance of stationary high field domain at the anode end of the inhomogeneity 2) the switching, and the decrease of current with increasing voltage.
明治大学の論文