Application of High-Resolution Electron Microscopy to the Study of Structure Defects and Grain Boundaries in Si_3N_4 and SiC-A Brief Review
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Recent results of high-resolution electron microscopy on Si_3N_4 and SiC are presented and reviewed. First, the structure images of α- and β-Si_3N_4 are described and the atomic arrangement of a structure defect in β-Si_3N_4 is derived directly from the images. For β-Si_3N_4-TiN composites prepared by a chemical vapour deposition (CVD) method, the high-resolution observation reveals crystallographic orientation relationships and interfaces between fibrous TiN and matrix β-Si_3N_4. Grain boundaries in CVD α-Si_3N_4 and β-SiC are investigated by the lattice images and the two-dimensional many-beam images. In β-SiC, the atomic configuration at tilt boundaries and the coherent matching of adjoining grains are elucidated from the observed images.
- 東北大学の論文
- 1984-03-30
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