プラズマ中の活性粒子を用いたTiO_2スパッタ膜の形成(III)

スポンサーリンク

概要

• 論文の詳細を見る

• It has been shown that rutile-rich TiO_2 films with excilent electrical and chemical characteristics can be prepared by deposition on Si surfaces at low temperature, using ionized oxygen gas with an admixture of He gas. The Si surfaces were cleaned by etching with Ar gas begore film deposition. We investigated whether the same rutile-rich TiO_2 films could be obtained on si surfaces cleaned by Ar etching if the substrates were cleaned with a gas mixture consisting of H_2 or CF_4 instead of Ar alone. Etching with only H_2 added led to the growth of rutile films. This result is attributed to interraction of positibely charged SiH or negatively charged SiF with positively charged O_2 ion.

• 福井工業大学の論文
• 2005-03-18

著者

• 柴田 明

  経営情報学科

関連論文

• プラズマ中の活性粒子を用いたTiO_2スパッタ膜の形成(III)
• プラズマ中の活性粒子を用いたTiO_2スパッタ膜の形成(II)
• プラズマ中の活性粒子を用いた TiO_2 スパッタ膜の形成

スポンサーリンク