システムインディスプレイの実現を目指した多結晶Ge/ガラスの大粒径化

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概要

• 論文の詳細を見る

• The effect of Si-layer insertion to the a-Ge/SiO_2 interfaces on solid-phase crystallization of a-Ge has been investigated for formation of large-grain poly-Ge. The crystallization process strongly depended on the thickness of the Si layers. For thin (<3 nm) Si-layers, crystal nucleation rate of a-Ge was retarded, and thus, large-grain poly-Ge was realized. For medium (〜5 nm) Si-layers, both the enhancement in nucleation rate and enlargement of grains were successfully achieved. On the other hand, for thick (〜20 nm) layers, the nucleation rate was enhanced, which resulted in small grains. These complicated phenomena were explained on the basis of the atomic mixing at the Ge/Si interfaces.

• 九州大学の論文

著者

• 太田 裕己

  九州大学大学院システム情報科学府電子デバイス工学専攻

関連論文

• システムインディスプレイの実現を目指した多結晶Ge/ガラスの大粒径化

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