リアクティブスパッタ法による低抵抗な窒化バナジウム膜の作製

概要

論文の詳細を見る
To prepare a diffusion barrier exhibiting low resistivity for a Cu metallization system of Si-LSI, we have investigated the sputtering conditions for the formation of VN film. V-N films deposited on glass substrates by various sputtering conditions were examined by x-ray diffraction analysis, and the crystal structure of their films were investigated. As a result, the film formed under the conditions of a substrate temperature of 400℃, RF sputtering power of 175W and N_2 flow ratio of 20% was the single-oriented (111) VN film. The electrical properties of its film were measured, and it was known that the values of resistivity (p) and the temperature coefficient of resistivity (TCR) at a thickness of 2000 Å is about 57μΩ cm and 650 ppm/℃, respectively. Then, the thermal stability of the VN/Si contact structure was investigated by Auger electron spectroscopy analysis, and it was found that this contact structure is stable up to 700℃.
旭川工業高等専門学校の論文
2004-03-20