Diffusion Simulation of Ultra-Low-Energy Implanted Boron in Silicon
スポンサーリンク
概要
- 論文の詳細を見る
We have simulated the diffusion of boron(B)after ultra-low-energy implantation in silicon during post-implantation annealing, based on our model[M. Uematsu:Jpn. J. Appl. Phys. 38(1999)3433]. When the B concentration is not so high (≲×10^<21> cm^<-3>), the experimental B depth profiles are fitted using the model with taking into account B segregation to silicon oxide at the surface. When the B concentration is very high(≳×10^<21> cm^<-3>), however, the simulation underestimates the diffusion, which is attributable to boron-enhanced diffusion. The self-interstitial emission from a silicon boride layer in the high B concentration region is taken into account, and the simulation well reproduces the experimental profiles.
- 2000-09-15
論文 | ランダム
- ケイ素化合物合成のための新反応群の開拓と,新しいケイ素系ポリマ-合成
- Differences in Inflammatory Activity at the Onset of Acute Myocardial Infarction According to the Clinical Presentation of Preinfarction Angina
- Relationship Between Myocardial Damage and C-Reactive Protein Levels Immediately After Onset of Acute Myocardial Infarction
- CLOSURE OF VENTRICULAR SEPTAL RUPTURE CAUSED BY ACUTE MYOCARDIAL INFARCTION USING A TRANSAORTIC BALLOON CATHETER
- パ-ソナルコンピュ-タを用いた静止画像デ-タベ-スの歴史資料検索への応用例 (歴史研究支援情報処理の研究--画像デ-タを中心にして)