P-Type GaN Formation by Mg Diffusion

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概要

• 論文の詳細を見る

• Magnesium(Mg)diffusion into unintentionally doped n-type GaN to form p-type GaN was studied. The Hall measurement data indicated that the diffused and annealed samples consistently show p-type conductivity with average hole concentrations in the range of 10^<16> cm^<-3>-10^<17> cm^<-3> and mobility of <90 cm^2・V・s. The diffused GaN showed a strong Mg relaled emission band with zero phonon peak at 3.27 eV and followed by two longitudinal optical(LO)phonon replica with 〜 90 meV separation at 10K.

• 社団法人応用物理学会の論文
• 2000-05-01

著者

• Yen Jia-liang

  Department Of Electrical Engineering National Taiwan University

• Yang Ying-jay

  Department Of Electrical Engineering National Taiwan University

• YANG Fuh-Shyang

  Department of Electrical Engineering, National Taiwan University

• LIN Ching-Yen

  Advanced Instrumentation Center, National Taiwan University

• Lin Ching-yen

  Advanced Instrumentation Center National Taiwan University

• Yang Fuh-shyang

  Department Of Electrical Engineering National Taiwan University

• Yang Ying-Jay

  Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, 1 Sec. 4, Roosevelt Road, Taipei, Taiwan

関連論文

• Fabrication of Blue GaN Light-Emitting Diodes by Laser Etching : Optics and Quantum Electronic
• P-Type GaN Formation by Mg Diffusion
• An Investigation of Direct-Current Characteristics of Composite-Emitter Heterojunction Bipolar Transistors

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