Study of Self-Diffusion in Silicon at High Pressure(Condensed Matter : Structure, Mechanical and Thermal Properties)

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概要

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• The process of self-diffusion in semiconductors at high pressure is studied using the statistical moment method including the anharmonicity effects of the lattice vibration. The activation energy, Q, and pre-exponential factor, D_0, of the self-diffusion coefficient are given in an explicit form. The thermodynamic relationships so obtained permit the direct calculation of the activation energy, Q, and pre-exponential factor, D_0, in Si at high pressure, both in the high temperature region near the melting temperature, and at low (room temperature) temperatures. The calculated results are shown to be in good agreement with the experimental data.

• 社団法人日本物理学会の論文
• 2006-02-15

著者

• LEE Jaichan

  Department of Materials Science and Engineering, Sung Kyun Kwan University

• Masuda Jindo

  Department Of Material Science And Engineering Tokyo Institute Of Technology

• Lee Jaichan

  Department Of Materials Science And Engineering Center For Advanced Plasma Surface Technology Sungky

• Lee Jaichan

  Department Of Materials Engineering Sungkyunkwan University

• HUNG Vu

  Department of Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sung

• HONG P.

  Hanoi National Pedagogic University

• Hung Vu

  Department Of Materials Science And Engineering Tokyo Institute Of Technology:hanoi National Pedagog

• MASUDA-JINDO K.

  Department of Materials Science and Engineering, Tokyo Institute of Technology

• HUNG Vu

  Department of Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University:(Present address)Hanoi National Pedagogic University

• LEE Jaichan

  Department of Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University

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