Modeling and Simulation of Tunneling Current in Oxygen-Plasma-Treated Aluminum Oxide Insulating Barrier for Magnetic Tunnel Junction : Magnetism

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In this letter, we present a current conducting model of tunneling current on oxygen plasma treated aluminum oxide (AlO_x) for conventional in-plane magnetized magnetic tunnel junctions (1-MTJs) Al (25 nm)/Co (25 nm)/AlO_x (1.8 nm)/Ni_<80>Fe_<20> (30 nm)/ AlCu (30 nm)/SiO_2 (1 μm)/Si and perpendicularly magnetized MTJs (P-MTJ) Al (25 nm)/Cu (2 nm)/Tb_<21>Fe_<79> (30 nm)/ AlO_x (2.2 nm)/Gd_<21>Fe_<79> (50 nm)/AlCu (25 nm)/SiO_2 (1 μm)/Si. The current conducting model includs direct tunneling current in consideration of image force and "hopping" conducting current through traps in AlO_x, and the model is able to explain the current-voltage (I-V) characteristics of Pd (250 nm)/AlO_x (1.8 nm)/Ni_<80>Fe_<20> (30 nm)/AlCu (30 nm)/SiO_2 (1 μm)/Si and Pd (250 nm)/AlO_x (2.2 nm)/Gd_<21>Fe_<79> (50 nm)/AlCu (25 nm)/SiO_2 (1 μm)/Si samples, which depend on oxygen plasma treatment conditions. Regarding suitable oxygen plasma treated AlO_x film, its I-V characteristics fit well direct tunneling model that includes image force, therefore, the I-MTJ using the thin AlO_x achieves a 13.8% magnetoresistive (MR) ratio.
社団法人応用物理学会の論文
2002-04-15