Comparison Between High- and Low-Dose Separation by Implanted Oxygen MOS Transistors for Low-Power Radio-Frequency Applications

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概要

• 論文の詳細を見る

• In this work, metal-oxide-semiconductor(MOS)field effect transistors(MOSFET)fabricated on low- and high-dose separation by implanted oxygen(SIMOX)substrates are compared in terms of RF performance. Combining S-parameter measurements with an accurate extraction method of small-signal model parameters enables us to investigate the RF performances of these two technologies and to evaluate the impact of the self-heating effect on silicon on insulator(SOI)MOSFET performances in this range. The cut-off frequency behavior of these two SOI MOSFET types is therefore analysed. In addition, using an analytical model, the influence of the buried oxide thickness on the coplanar transmission lines is investigated. All these results show the potentiality of the low-dose SIMOX technology for low-power radio-frequency applications.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• Omura Yasuhisa

  Kansai Univ. Osaka Jpn

• Omura Yasuhisa

  Kansai University And High-technology Research Center

• Jomaah Jalal

  Lpcs:lemo

• Rozeau Olivier

  Lpcs:lemo:stmicroelectronics

• BOUSSEY Jumana

  LPCS

• JOMAAH Jalal

  LPCs, B.P.

関連論文

• Physics-Based Determination of Carrier Effective Mass Assumed in Density Gradient Model
• Comparison Between High- and Low-Dose Separation by Implanted Oxygen MOS Transistors for Low-Power Radio-Frequency Applications
• Kink-Related Excess Noise in Deep Submicron Partially and Moderately Fully Depleted Unibond N-Metal Oxide Semiconductor Field Effect Transistor(MOSFET)

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