Kink-Related Excess Noise in Deep Submicron Partially and Moderately Fully Depleted Unibond N-Metal Oxide Semiconductor Field Effect Transistor(MOSFET)

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概要

• 論文の詳細を見る

• In this paper, the low-frequency excess noise due to the kink effect in deep submicron unibond N-metal oxide semiconductor field effect transistor(N-MOSFETs)is investigated. Drain current power spectral density measurements are performed for partially and moderately fully depleted and body-tied devices. The behavior of this effect with the frequency is thoroughly analysed and the control of such a noise overshoot by applying a back-gate voltage is also demonstrated and discussed. A comparison between unibond and SIMOX technologies, in terms of noise behavior, is presented. Finally, the impact of the body contact on the noise is also shown.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• Pelloie Jean

  Leti-cea(dmel Ceng)

• Raynaud Christine

  Leti-cea(dmel Ceng)

• Jomaah J

  Lpcs B.p.

• Balestra Francis

  Lpcs B.p.

• Haendler Sebastien

  Lpcs B.p.

• HAENDLER Sebastien

  LPCs, B.P.

• JOMAAH Jalal

  LPCs, B.P.

• BALESTRA Francis

  LPCs, B.P.

関連論文

• Comparison Between High- and Low-Dose Separation by Implanted Oxygen MOS Transistors for Low-Power Radio-Frequency Applications
• Kink-Related Excess Noise in Deep Submicron Partially and Moderately Fully Depleted Unibond N-Metal Oxide Semiconductor Field Effect Transistor(MOSFET)

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