Film Growth Modeling of Metal Organic Chemical Vapor Deposition of Copper from Copper(I)-Hexafluoroacetylacetonate Vinyltrimethoxysilane in the Presence of Hydrogen

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Copper films were deposited by metalorganic chemical vapor deposition(MOCVD)using copper(I)-hexafluoroacetyl-acetonate vinyltrimethoxysilane [Cu(hfac)(VTMOS)] as the precursor in the presence of H_2.In contrast to blanket growth in Ar, selective growth was maintained on TiN versus SiO_2 at a precursor partial pressure of 1.48×10^-2 Torr and 473K by introducing H_2 as the ambient gas.A film growth modeling based on the Langmuir-Hinshelwood rate equation was established to describe the copper deposition at the initial nucleation stage in H_2.The result suggested that H_2 physically adsorbed on TiN surface to hinder the nucleation of copper.Applying a dc bias on substrate surface showed that the film growth was accelerated by both positive and negative biases, indicating a disproportionation reaction dominated the film growth.The less promoted growth rate under positive bias was attributed to the steric factor between the intermediate Cu(hfac)and the charged substrate.
社団法人応用物理学会の論文
2000-04-15