Formation and Shape of InAs Nanopaticles on GaAs Surfaces : Fundamental Thermodynamics

概要

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Consideration of the heteroepitaxial growth of InAs on GaAs surfaces, and the substrate orientation-dependent growth mode, has led us to examine the thermodynamic aspects of heteroepitaxy in general. We argue that the molar Gibbs free energy G is the appropriate state function for heteroepitaxy, in contrast to Gibbs's approach of using the Helmholtz free energy, since G alone guarrantees mathematical continuity in the theory's predictions in the limit of isotropic stress. An expression for the critical heteroepitaxial strain required to melt a film is given. We comment that evidence of stress-induced surface liquid-like phenomena has been present in experiments for over 30 years, but such liquid phase phenomena had no theoretical basis until the present work. In situ electron microscopy and electron diffraction studies of heteroepitaxial growth are probably the most favourable techniques for investigating the proposed liquid phase.
社団法人応用物理学会の論文
2000-07-30