Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate

概要

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We perform ab initio calculations to obtain the formation energy of thin InAs films grown on the GaAs(001) substrate. For the island surface morphology, a hybrid method combining ab initio calculations and elasticity theory is employed. Our results show that two-dimensional growth is favored for the first monolayer in a wide range of chemical potentials. Additional deposited material may transform the surface morphology into the three-dimensional island growth mode. The driving force behind this surface morphology change is relieving the elastic energy in the films.
社団法人応用物理学会の論文
2000-07-30