Control of Plasma Parameters for High-Quality Hydrogenated Amorphous Carbon Growth

概要

論文の詳細を見る
The correlation between plasma parameters and film properties is demonstrated in the growth of device-grade hydrogenated amorphous carbon(a-C : H)from pure methane(CH_4)by capacitively coupled plasma-enhanced chemical vapor deposition(CCP-CVD). The deposition rate, refractive index, film stress and film hardness are strongly correlated with the self-bias voltage, V_<dc>. Hard, rigid, and transparent a-C : H films can be fabricated when the self-bias voltage, V_<dc> is around 160-200V. The ion energy, which is determined by the V_<dc> is used to rearrange the film structure. The V_<dc> of around 160-200V corresponds to 70-80eV of the C ion flux in the case of C_2H^+_5 ions. According to the calculation using a modified Thomas-Fermi potential as the Coulomb screening potential, the incident C ion energy is estimated to penetrate the carbon film of 1.8g/cm^3 density to the depth of about 0.55 nm, which enables the densification of the a-C : H film.
社団法人応用物理学会の論文
2000-11-15