Formation of Individual Holes in Amorphous SiO_2 by Swift Heavy-Ion Bombardment Followed by Wet and Dry Etching

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概要

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• Individual holes in amorphous SiO_2 were formed from latent tracks which were introduced by bombardment with swift iodine ions. Hole contours strongly depend on the etching method used. Conic holes with the highest aspect ratio were obtained by etching with 48% hydrofluoric acid. The aspect ratio of the holes increased with the acidity of the hydrofluoric acid. Selective etching of the latent tracks was not observed with reactive ion etching, yet 48% hydrofluoric acid etching followed by reactive ion etching formed columnar holes. The etching mechanism is briefly discussed.

• 社団法人応用物理学会の論文
• 2000-12-30

著者

• AWAZU Koichi

  Electrotechnical Laboratory

• Shima Kunihiro

  Tandem Accelerator Center University Of Tsukuba

• Awazu K

  National Inst. Of Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn

• ISHII Satoshi

  Tandem Accelerator Center, University of Tsukuba

• Ishii Satoshi

  Tandem Accelerator Center University Of Tsukuba

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• Impact Parameter Dependent Probability of Au L_3-Shell Ionization by 40.7 MeV Ar Ions
• Formation of Individual Holes in Amorphous SiO_2 by Swift Heavy-Ion Bombardment Followed by Wet and Dry Etching
• Structure of Latent Tracks Created by Swift Heavy Ions in Amorphous SiO2 and Zinc Phosphate Glass

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