Optical Second Harmonic Spectroscopy of the Ge-Oxide/Ge(111) Interface : Surfaces, Interfaces, and Films

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概要

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• We have measured reflected optical second harmonic (SH) intensity from the Ge-oxide/Ge(111) interface as a function of the incident photon energy ranging from hw = 1.10 to 1.65 eV. The oxide layers were formed either by oxidizing a Ge(111) substrate in pure oxygen gas at 823 K or by oxidizing a Ge(111) substrate in dry air at room temperature. We observed that SH spectra from the thermally oxidized film have resonant peaks around hw = 1.16 eV and 1.48 eV. We suggest that the peaks at hw = 1.16 eV and 1.48 eV originate from the one-photon resonance of the electronic level of the GeO_2/Ge(111) interface and the two-photon resonance of the electronic level of bulk germanium, respectively.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Ohashi Hiroaki

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Mizutani Goro

  School Of Materials Science Jaist

• Sano Haruyuki

  School Of Materials Science Japan Advanced Institute Of Science And Technology

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