Preclpltatlon in AS-Ion-Implanted and Annealed InAs : Semiconductors

スポンサーリンク

概要

• 論文の詳細を見る

• Low-energy As-ion-implanted InAs was examined using double-crystal X-ray diffraction and transmission electron microscopy. For uniform defect distribution, multiple implantations were made at 0.05-0.4 MeV with 4×10^<14>-5 ×10^<15>ions/cm^2. After anuealing at 600℃for 20 min, As precipitates were observed, and the implantation-induced strain was significantly reduced, showing the recovery of crystallinity. The density of the As precipitates was 7.4×10^<16>cm^<-3> and the mean diameter was 55A, which corresponds to a volume fraction of 1.1%.

• 社団法人応用物理学会の論文
• 2001-11-15

著者

• Han Haewook

  Center For Terahertz Photonics Department Of Electrical And Computer Engineering Pohang University O

• Kim Seon-ju

  Center For Terahertz Photonics Department Of Electrical And Computer Engineering Pohang University O

関連論文

• Preclpltatlon in AS-Ion-Implanted and Annealed InAs : Semiconductors

スポンサーリンク