Characteristics of Deep Submicron Grooved-Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors

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概要

• 論文の詳細を見る

• Based on the hydrodynamic energy transport model, the electrical characteristics of grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETS) are studied and compared with those of corresponding conventional planar PMOSFETs. The simulations reveal that the short-channel effect and drain-induced barrier lowering (DIBL) are absent in grooved-gate PMOSFETs, which have good hot-carrier effect immunity, but the drain current driving capability is lower than that in planar ones. Subsequently, the reasons for these differences between grooved-gate and planar PMOSFETs are analyzed from the viewpoint of interior physical parameter distribution. These parameters include surface potential, electric field, hot-carrier velocity, temperature and so forth.

• 社団法人応用物理学会の論文
• 2001-10-15

著者

• Xue Lei

  Microelectronics Institute Xidian University

• Hao Yue

  Microelectronics Institute Xidian University

• REN Hongxia

  Microelectronics Institute, Xidian University

• Ren Hongxia

  Microelectronics Institute Xidian University

関連論文

• Characteristics of Deep Submicron Grooved-Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors

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