Calculation of the Precursor Flux from Optical Emission Spectroscopy Data in Plasma Enhanced Chemical Vapour Deposition of Silane and its Correlation with the Deposition Rate(Nuclear Science, Plasmas, and Electric Discharges)

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Variation of the optical emission due to SiH^*, Ar^* and H_α at 414.2 nm, 750.4 nm and 656 nm respectively with respect to rf power were studied during the deposition of amorphous (a-Si : H) and microcrystalline (μc-Si : H) silicon films by plasma enhanced chemical vapor deposition (PECVD) method from a mixture of silane and argon. We compared the SiH^* emission intensity with the SiH^* density calculated from the chemical kinetics of the dominant bimolecular reactions occurring within the plasma. Extending the calculation to estimate concentrations of SiH_3 and SiH_2 radicals (precursors) generated by parallel reaction processes we find that the general trend of variation of the deposition rate of the samples with rf power follows that of the calculated precursor densities. Formation of μc-Si : H has been found to be associated with a sharp increase of the ratio of the density of the excited Ar^* species to that of SiH_3 or SiH_2 radicals.
社団法人応用物理学会の論文
2002-06-15