Can Disorder Drive a Mott Insulator into a Metal in 2D?(Yukawa International Seminar 2004 (YKIS2004) Physics of Strongly Correlated Electron Systems)

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概要

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• We find that isoelectronic disorder generates novel phases in a Mott insulator at half filling. For both binary disorder potentials and for random site disorder models, the Mott gap is destroyed locally generating puddles of gapless excitations. With increasing disorder, these puddles grow and rather surprisingly, form an inhomogenous metal in 2D. Antiferromagnetic long range order is more robust than the Mott gap and persists into the metal, getting destroyed close to a critical disorder where doubly occupied and empty sites percolate.

• 理論物理学刊行会の論文
• 2006-02-06

著者

• Trivedi Nandini

  Department Of Theoretical Physics Tata Institute Of Fundamental Research:department Of Physics The O

• HEIDARIAN Dariush

  Department of Theoretical Physics, Tata Institute of Fundamental Research

• Heidarian Dariush

  Department Of Theoretical Physics Tata Institute Of Fundamental Research

• TRIVEDI Nandini

  Department of Theoretical Physics, Tata Institute of Fundamental Research:Department of Physics, The Ohio State University

関連論文

• Can Disorder Drive a Mott Insulator into a Metal in 2D?(Yukawa International Seminar 2004 (YKIS2004) Physics of Strongly Correlated Electron Systems)

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