High Dielectric Constant Films of Amorphous LiNbO_3 Prepared by Sputtering Deposition

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概要

• 論文の詳細を見る

• Thin films of amorphous LiNbO_3 were obtained by a sputtering deposition. The films were crystallized by annealing at 500℃. Measurements of dielectric constant and loss tangent were made for the as-grown film at 1 k to 1 MHz. A temperature dependence of the dielectric constant in a course of heating showed a peak at about 350℃. The peak value at 1 kHz reached 10^4.

• 社団法人応用物理学会の論文
• 1981-01-05

著者

• Wasa Kiyotaka

  Materials Research Laboratory Matsushita Electric Industrial Co. Ltd.

• Mitsuyu Tsuneo

  Materials Research Laboratory Matsushita Electric Industrial Co. Ltd.

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