Distribution of Obstacle Spacings to Dislocation Motion in the Pre-Yield Region in White Tin Single Crystals
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概要
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Moved distances of individual dislocations were measured on the surface of a single crystal of white tin by using the etch hillock technique. In this technique, the moved distance was just coincident with the length of a hillock trace l. The applied stress was lower than that at the elastic limit. That is, the stress was maintained below 50g/mm^2. The distribution of the moved distance of dislocations was obtained by measuring the length of the individual hillock traces. The result was theoretically analyzed on the condition that the obstacles were randomly distributed and the deduced distribution function 〓(l) showed good agreement with the experimental results. As a result, the obstacle for the moving dislocation in the range of the stress lower than that at the elastic limit was found to be mainly constructed by stationary dislocations.
- 社団法人応用物理学会の論文
- 1981-09-05