Highly-Strained In_xGa_<1-x>As/GaAs Multiple Quantum Wells for Electroabsorption Modulation
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概要
- 論文の詳細を見る
The properties of strained In_xGa_<1-x>As/GaAs multiple quantum welts with indium concentrations of up to 0.28 were investigated experimentally for surface-normal electroabsorption modulator applications in the 0.9 to 1.1 μm wavelength range. A 0.5 μm-thick alloy buffer (In_yGa_<1-y>As or In_yAl_<1-y>As) was employed in order to relax the in-plane lattice constant of the epitaxial layers from that of GaAs, with two sets of QW layers sharing the strain in opposite directions (oscillating compressive/tensile strain). Distinct exciton peaks and clear quantum confined Stark effect with the maximum Δα= 5900 (cm^<-1>) were obtained from such structures at γ=1.05-1.09 μm, indicating good material quality.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Niki Shigeru
Department Of Electrical And Computer Engineering University Of California
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Chang William
Department Of Electrical And Computer Engineering University Of California
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Chang Jessica
Department Of Electrical And Computer Engineering University Of California
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CHENG An-nien
Department of Electrical and Computer Engineering, University of California
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WILDER Harry
Department of Electrical and Computer Engineering, University of California
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Wilder Harry
Department Of Electrical And Computer Engineering University Of California
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Cheng An-nien
Department Of Electrical And Computer Engineering University Of California
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