One-Step Growth of GaAs Layers on Si Substrates by Low-Pressure MOCVD

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概要

• 論文の詳細を見る

• GaAs epitaxial layers have been successfully obtained on Si(100) <011> 4°-off substrates by 3〜4 Torr low-pressure MOCVD using TEG and AsH_3 at 590〜610℃. This method consists of one-step growth in which the initial buffer layers or intermediate layers were neglected. As-grown 5 μm GaAs layers revealed an etch pit density of 1×10^6〜5×10^6/cm^2. The FWHM of X-ray diffraction was about 180 arc sec for the (400) reflection of 4.5〜5 μm GaAs layers. Hall mobilities of Si-doped GaAs layers were 3900 cm^2・V^<-1>・s^<-1> with an electron concentration of 1.4×10^<17>/cm^3 and 5100 cm^2・V^<-1>・s^<-1> with 1.6×10^<16>/cm^3 at room temperature.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• SATO Kiyotaka

  Semiconductor Research Laboratory, Clarion Co., Ltd.

• Togura Kenji

  Semiconductor Research Laboratory Clarion Co. Lid.

• Sato Kiyotaka

  Semiconductor Research Laboratory Clarion Co. Lid.

関連論文

• Selective Growth of GaAs/Si by One-Step Low-Pressure Metalorganie Chemical Vapor Deposition
• One-Step Growth of GaAs Layers on Si Substrates by Low-Pressure MOCVD

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