A New Method for Measurement of MOSFET Channel Length : Semiconductors and Semiconductor Devices

スポンサーリンク

概要

• 論文の詳細を見る

• We use the transresistance r≡gm/g^2 to measure channel length of MOSFET's with arbitrary parasitic source-drain series resistance. The channel length error due to the bias dependence of series resistance is completely eliminated by extrapolation to zero gate drive. The final accuracy is limited by sourcedrain asymmetry and errors in threshold voltage measurement; measurements on 0.5μm lightly-doped drain MOSFET's indicate it is about 3 nm and a factor of seven better than previous method.

• 社団法人応用物理学会の論文
• 1988-08-20

著者

• Jain Sanjay

  At & T Bell Laboratories

• JAIN Sanjay

  AT & T Bell Laboratories

関連論文

• A New Method for Measurement of MOSFET Channel Length : Semiconductors and Semiconductor Devices
• Equivalence and Accuracy of MOSFET Channel Length Measurement Techniques

スポンサーリンク