Modeling the Impact of Varied Surface Topologies on Irregular Boron Diffusion Profiles

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概要

• 論文の詳細を見る

• The relationship between the deep-boron diffusion profile and the surface shape of a silicon substrate was studied. A heavy degree of surface dependence was established. This surface dependence was quantified for a set of specific process conditions. A simulator that can model the effects of surface variation was created, and found to be remarkably successful for both two- and three-dimensional simulations.

• 社団法人応用物理学会の論文
• 1999-12-30

著者

• Suzuki Kenichiro

  Lsi Basic Research Lab Silicon Systems Research Labs Nec Corporation

• RUMPF Robert

  LSI Basic Research Lab, Silicon Systems Research Labs, NEC Corporation

• Rumpf Robert

  Lsi Basic Research Lab Silicon Systems Research Labs Nec Corporation

関連論文

• Design, Process, and Evaluation of a Tunable Optical Fabry-Perrot Filter Using a Silicon Capacitive Pressure Sensor(Special Issue on Current Electromechanical Devices and Their Materials with Recent Innovations)
• Modeling the Impact of Varied Surface Topologies on Irregular Boron Diffusion Profiles

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