Metal Semiconductor Metal Photodetectors and Modulators for Long Wavelength Applications : Optimization of Solid Source Molecular Beam Epitaxy of AlInes/(Al)GaInAs-Heterostructures

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概要

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• Solid source molecular beam epitaxial (MBE) growth of AlInAs/(Al)GaInAs heterostructures for applications in metal-semiconductor-metal (MSM) photodetectors and electrooptic MSM modulators has been optimized with regard to high frequency performance. The influence of the thickness of an Alines barrier enhancement layer on the dynamical characteristics is also investigated. In contrast to the commonly chosen thickness of about 10 nm we show that an increase to 100 nm Alines results in bandwidth enhancement and noise reduction. Using these improved structures with breakdown voltages exceeding V_B=100 V for electrooptic switching we attain an on-off-ratio of 19:1.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Dirr Siegfried

  Optoelectronics Department University Of Ulm

• Kummetz Thomas

  Optoelectronics Department, University of Ulm

• Sickmoller Markus

  Optoelectronics Department, University of Ulm

• Herrmann Annegret

  Optoelectronics Department, University of Ulm

• Kowalsky Wolfgang

  Optoelectronics Department, University of Ulm

• Kowalsky Wolfgang

  Optoelectronics Department University Of Ulm

• Herrmann Annegret

  Optoelectronics Department University Of Ulm

• Sickmoller Markus

  Optoelectronics Department University Of Ulm

• Kummetz Thomas

  Optoelectronics Department University Of Ulm

関連論文

• Metal Semiconductor Metal Photodetectors and Modulators for Long Wavelength Applications : Optimization of Solid Source Molecular Beam Epitaxy of AlInes/(Al)GaInAs-Heterostructures
• Photonic Devices Based on Crystalline Organic Semiconductors for Optoelectronic Integrated Circuits

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