Elastic Scattering and Depletion Effects on Current-Voltage Characteristics of Gated Resonant Tunneling Diodes
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概要
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Numerical solutions to the two-dimensional Poisson equation and the continuity equation have been used to calculate the lateral depletion region and carrier concentrations by the finite difference method. Simulation of the gated resonant tunneling diode (GRTD) using a self-consistent quantum model shows depletion effects on current voltage characteristics. In the bias conditions whereby the GRTD reaches zero dimension in the well region, we consider elastic scattering mechanisms and the presence of evanescent modes to calculate resonant tunneling transmission coefficients. We present the effects of subband mixing and elastic scattering in a two-dimensional simulation of the current-voltage characteristics of the GRTD. The effect of this scattering results in shifting and broadening of the tunneling probability, and reduction of its peak value.
- 1995-02-28
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