Growth of ZnS_xSe_<1-x> Layers on ZnS and ZnSe Substrates by a Solid-State-Diffusion Technique

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The present paper reports on the growth of zinc sulpho-selenide solid solutions on ZnS and ZnSe substrates by a closed tube, solid-state-diffusion technique. The composition of the overlayer prepared by the diffusion of Se into ZnS is uniform throughout a depth of the order of 5μm. On the other hand, the overlayer prepared by the diffusion of S into ZnSe does not have such uniform composition as in the case of the diffusion of Se: the variation in composition is 〜5%. Below the overlayer, a transition region with a varying composition was formed. The depth profile of the composition of the transition region is approximated by a diffusion theory, which provides the diffusion constant of Se into ZnS at a temperature 1070℃, that is 5× 10^<-13>cm^2/sec, under the condition that S_2 and Se_2 pressures are P_<s2>=0.75 atm and P_<se2>=1.75atm. The diffusion constant of S into ZnSe is 8×10^<-12>cm^2/sec at 1060℃ under P_<s2>=0.57 and P_<se2>=1.53 atm.
社団法人応用物理学会の論文
1978-05-05