Formation of a Stacking Fault-Free Region in Thermally Oxidized Silicon

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概要

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• A stacking fault-free region was found to be formed beneath a Si-SiO_2 interface when a slicon crystal was oxidized to generate stacking faults and subsequently annealed in nitrogen atmosphere. This region extends further with prolonged annealing, irrespective of the size and density of the stacking faults already introduced in the crystal. Experimentally it is found that the growth of a stacking fault-free region during annealing follows the equation, d=const. T^2exp(-Q/kT) where n and Q are 0.63±0.06 and 4.5±0.6eV, respectively. The stacking fault nuclei were confirmed to be dissolved after annealing of oxidized crystals.

• 社団法人応用物理学会の論文
• 1978-05-05

著者

• Yoshinaka Akira

  Musashi Works Hitachi Ltd.

• Shimizu Hirofumi

  Musashi Works Hitachi Ltd.

• SUGITA Yoshimitsu

  Musashi Works, Hitachi, Ltd.

• Sugita Yoshimitsu

  Musashi Works Hitachi Ltd.

関連論文

• A Defect Control Technique for the Intrinsic Gettering in Silicon Device Processing
• Formation of a Stacking Fault-Free Region in Thermally Oxidized Silicon

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