Effect of Back-Channel Plasma Etching on the Leakage Current of a-Si:H Thin Film Transistors

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概要

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• The effects of back-channel plasma etching conditions and the amount of HCl and plasma power on the leakage current of a-Si:H thin-film transistors(TFTs)were studied. Atomic force microscopy(AFM)and secondary ion mass spectrometry(SIMS)analyses were performed to determine the optimal etching conditions which reduce the leakage current at the back channel. Etching with a HCl-rich gas mixture was found to be effective to reduce the leakage current and chlorine ions were believed to affect the back-channel surface characteristics and exhibit acceptor-like behavior in the lower subthreshold region. Chlorine is believed to suppress the electron generation in the back-channel region and trap electrons that are generated by thermal emission. The back-channel surface roughness was found to have no appreciable effect on the leakage current.

• 社団法人応用物理学会の論文
• 2000-03-15

著者

• Rhee Shi-woo

  Department Of Chemical Engineering Pohang University Of Science And Technology(postech)

• Yi Chung

  Department of Transport Vehicle Engineering, Gyeongsang National University

• Ju Jin-ho

  Samsung Electronics Co. Amlcd Division

• PARK Sae-Hwan

  Samsung Electronics Co., AMLCD Division

• Park Sae-hwan

  Samsung Electronics Co. Amlcd Division

• Yi Chung

  Department Of Chemical Engineering Pohang University Of Science And Technology(postech)

関連論文

• C207 Study on Natural Convection in a Rectangular Enclosure with a Heating Source(Double diffusion)
• Effect of Back-Channel Plasma Etching on the Leakage Current of a-Si:H Thin Film Transistors
• Nanomechanical Thermal Analysis of Indium Films Using Silicon Microcantilevers

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